Capacitances and Charge Distribution Analysis in Graded-Channel SOI MOSFETS

This work presents an analysis of capacitances in Graded-Channel (GC) SOI MOSFETs using numerical simulations, validated through the comparison to experimental data. The influence of transistors channel length, length of the lightly doped region, and technology parameters downscaling have been investigated through two-dimensional numerical simulations.

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Publication Details

Journal
Journal of Integrated Circuits and Systems
Published
2024-08-01
DOI
https://doi.org/10.29292/jics.v19i2.837
Primary Topic
Advancements in Semiconductor Devices and Circuit Design
Type
article
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article

Capacitances and Charge Distribution Analysis in Graded-Channel SOI MOSFETS

Michelly de Souza, Allan Oliveira Lopes
Journal of Integrated Circuits and Systems
Advancements in Semiconductor Devices and Circuit Design
article

Capacitances and Charge Distribution Analysis in Graded-Channel SOI MOSFETS

Michelly de Souza, Allan Oliveira Lopes
article en

Abstract

This work presents an analysis of capacitances in Graded-Channel (GC) SOI MOSFETs using numerical simulations, validated through the comparison to experimental data. The influence of transistors channel length, length of the lightly doped region, and technology parameters downscaling have been investigated through two-dimensional numerical simulations.

Journal of Integrated Circuits and SystemsVol. 19(2)
Centro Universitário FEI (BR)
Affordable and clean energy
Openalex Percentile: Top 90%
Advancements in Semiconductor Devices and Circuit Design
DOIOpen Access PDFOpenAlex
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Capacitances and Charge Distribution Analysis in Graded-Channel SOI MOSFETS — Michelly de Souza, Allan Oliveira Lopes · Journal of Integrated Circuits and Systems (2024) | TGRS Research Map | TGRS