Role of trapezoidal defects in enhancing the yellow luminescence of high-Al content <i>n</i>-type AlGaN films
We have studied the origin of the yellow luminescence of high-Al content n-type AlGaN films. We found that the intensity of the yellow luminescence (YL) band was closely related to the Al/Ga vacancy defects and Si doping, suggesting that the enhancement of the YL band in n-type AlGaN should be ascribed to the donor–acceptor pair transitions from donor impurities such as Si doping to Al/Ga vacancy acceptors in n-type AlGaN films. It is found that the trapezoidal defects formed during the epitaxial growth process may produce a lot of Ga/Al vacancy defects, thus enhancing the yellow band luminescence. By increasing the pressure of the AlN nucleation layer, the formation of trapezoidal defects can be suppressed.
Authors
- Yujie Huang (ORCID: https://orcid.org/0000-0002-3509-0785)
- Zongshun Liu (ORCID: https://orcid.org/0000-0003-4566-3927)
- Yufei Hou (ORCID: https://orcid.org/0000-0001-5385-6716)
- Jing Yang (ORCID: https://orcid.org/0000-0003-3483-4276)
- Degang Zhao (ORCID: https://orcid.org/0000-0002-0752-3408)
- Feng Liang (ORCID: https://orcid.org/0000-0002-2064-8918)
- Lihong Duan (ORCID: https://orcid.org/0000-0002-4840-6873)
- Zhaolan Sun (ORCID: https://orcid.org/0009-0005-5831-7179)
Institutions
- Chinese Academy of Sciences (CN)
- Institute of Semiconductors (CN)
- University of Chinese Academy of Sciences (CN)
Publication Details
- Journal
- Applied Physics Letters
- Published
- 2024-08-05
- DOI
- https://doi.org/10.1063/5.0218126
- Citations
- 2
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.62
Funders
- National Natural Science Foundation of China
- Youth Innovation Promotion Association of the Chinese Academy of Sciences
- Youth Innovation Promotion Association