AC monochromatic recombination velocities at both (n+/p) and (p/p+) surfaces of (n+/p/p+) silicon solar cell, as applied to optimize (p) base thickness

Excess minority carrier's diffusion equation in the base of (n+/p /p+) silicon solar cell under front (n+) (n+/monochromatic illumination in frequency modulation is resolved.Using conditions at the base limits involving both recombination velocities Sf and Sb, respectively at the junction (n+/p) and back surface (p/p+), the expression of the excess minority carriers' density (x, , ( )) is determined, for given absorption coefficient ( ). is represented according to (Sf).The expressions of AC monochromatic recombination velocity Sf(, H, ( )) at the junction and Sb(, H, ( )) at the ac back surface are then derived from AC density of photocurrent Jph (, Sf, Sb).These deduced expressions of recombination velocity of minority carriers are depending also, on the frequency of modulation, the electronic parameters (D(); L()) , the Si material absorption coefficient ( ) and the base (H) thickness.From their graph curves, AC monochromatic …