Abnormal behavior of the plasma potential in an inductively coupled plasma with a DC-biased grid

Abstract The formation of the plasma potential and the generation mechanism of very low electron temperature plasma are investigated in an inductively coupled plasma with a DC biased grid. The electron temperature is controlled from 2.4 eV to 0.2 eV according to the grid voltage (10 V to −40 V). Interestingly, when the grid voltage is negatively biased, the electron temperature decreases and the plasma potential decreases with the grid voltage, but then increases below −10 V which is abnormal. This behavior of the plasma potential is abnormal since the plasma potential is generally proportional to the electron temperature. The main reason for the abnormal increase of the plasma potential is the difference in the flux of electrons and ions below the grid. As the grid is negatively biased, the electron flux is greatly reduced compared to the ion flux, leading to an increase in plasma potential. After −20 V, the plasma potential saturates, because although the number of electrons entering the grid decreases, the electron flux is maintained by secondary electrons generated in the grid mesh. This abnormal increase in plasma potential decreases with pressure. An increase in plasma potential with gas species is also observed. The same behavior is observed for Ar, He, and N 2 gases. The abnormal behavior of the plasma potential is explained with the current continuity.

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Publication Details

Journal
Plasma Sources Science and Technology
Published
2024-08-01
DOI
https://doi.org/10.1088/1361-6595/ad6cf1
Citations
10
Primary Topic
Plasma Diagnostics and Applications
Type
article
Field-Weighted Citation Impact
2.09

Funders

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article

Abnormal behavior of the plasma potential in an inductively coupled plasma with a DC-biased grid

Jiwon Jung, Chin‐Wook Chung, Junyoung Park, Min-Seok Kim
10 citations
Plasma Sources Science and Technology
Plasma Diagnostics and Applications
2.09
article

Abnormal behavior of the plasma potential in an inductively coupled plasma with a DC-biased grid

Jiwon Jung, Chin‐Wook Chung, Junyoung Park, Min-Seok Kim
article en
10 citations

Abstract

Abstract The formation of the plasma potential and the generation mechanism of very low electron temperature plasma are investigated in an inductively coupled plasma with a DC biased grid. The electron temperature is controlled from 2.4 eV to 0.2 eV according to the grid voltage (10 V to −40 V). Interestingly, when the grid voltage is negatively biased, the electron temperature decreases and the plasma potential decreases with the grid voltage, but then increases below −10 V which is abnormal. This behavior of the plasma potential is abnormal since the plasma potential is generally proportional to the electron temperature. The main reason for the abnormal increase of the plasma potential is the difference in the flux of electrons and ions below the grid. As the grid is negatively biased, the electron flux is greatly reduced compared to the ion flux, leading to an increase in plasma potential. After −20 V, the plasma potential saturates, because although the number of electrons entering the grid decreases, the electron flux is maintained by secondary electrons generated in the grid mesh. This abnormal increase in plasma potential decreases with pressure. An increase in plasma potential with gas species is also observed. The same behavior is observed for Ar, He, and N 2 gases. The abnormal behavior of the plasma potential is explained with the current continuity.

Plasma Sources Science and TechnologyVol. 33(8)
Hanyang University (KR), Anyang University (KR)
Korea Semiconductor Research Consortium
Openalex Percentile: Top 13%
Plasma Diagnostics and Applications
2.09
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