Ultra-high electron mobility in Sn-doped two-dimensional Ga<sub>2</sub>O<sub>3</sub> modified by biaxial strain and electric field
Abstract 2D Ga 2 O 3 exhibits overwhelming advantages over its bulk counterpart, whereas manipulating the carriers is rare. We report strain-dependent electronic structures and transport properties of Sn-doped 2D Ga 2 O 3 using first-principles calculations with deformation potential theory. The band gaps are tunable from 2.23 eV to 1.20 eV due to the strain-mediated σ * anti-bonding and π bonding state variations. Specifically, ultra-high electron mobility of 22579.32 cm 2 V −1 s −1 is predicated under 8% tensile. Further electric field modulations suggest the retaining of band gap and effective mass. These results highlight its property manipulations and nanoscale electronic applications.
Authors
- Chao Ma (ORCID: https://orcid.org/0000-0001-8599-9340)
- Meng Wu (ORCID: https://orcid.org/0000-0003-4484-1680)
- Hui Zeng (ORCID: https://orcid.org/0000-0002-0729-6604)
Institutions
- Hunan University (CN)
- Xiamen University (CN)
- Hunan University of Science and Engineering (CN)
Publication Details
- Journal
- Applied Physics Express
- Published
- 2024-08-01
- DOI
- https://doi.org/10.35848/1882-0786/ad65b4
- Citations
- 4
- Primary Topic
- Ga2O3 and related materials
- Type
- article
- Field-Weighted Citation Impact
- 0.47
Funders
- Education Department of Hunan Province
- Natural Science Foundation of Fujian Province
- Natural Science Foundation of Hunan Province
- Scientific Research Foundation of Hunan Provincial Education Department
- Fundamental Research Funds for Central Universities of the Central South University