Fabrication of nanostructured MgO:Fe as NO2 gas sensor prepared by spray pyrolysis technique

Nanostructured MgO:Fe was fabricated by spray Pyrolysis technique (SPT). XRD verifies MgO's cubic structure. The MgO thin film's crystallite size increased to 10.7–15.41 nm due to doping. SEM pictures display The surface becomes rougher and the grain size increases with concentration. The ideal MgO's average transmission value in the visible spectrum was 70%. The Tauc relation was used to calculate Eg, which decreased for MgO:Fe doping at 4%wt concentration from 362.1 to 3.52 eV. Resistance change as a measure of film sensitivity to gas indicates that MgO is a p-type semiconductor, with the maximum resistance being shown by MgO:Fe at 4%wt. The sensitivity of MgO films to NO2 diminishes as Fe content increases.

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Publication Details

Journal
Digest Journal of Nanomaterials and Biostructures
Published
2024-08-05
DOI
https://doi.org/10.15251/djnb.2024.193.1095
Primary Topic
Magnesium Oxide Properties and Applications
Type
article
Field-Weighted Citation Impact
0.00

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article

Fabrication of nanostructured MgO:Fe as NO2 gas sensor prepared by spray pyrolysis technique

Nadir Fadhil Habubi, Sami Salman Chiad, M. Jadan, Hager R. Ali et al.
Digest Journal of Nanomaterials and Biostructures
Magnesium Oxide Properties and Applications
article

Fabrication of nanostructured MgO:Fe as NO2 gas sensor prepared by spray pyrolysis technique

Nadir Fadhil Habubi, Sami Salman Chiad, M. Jadan, Hager R. Ali, R. I. Jasim, Y. H. Kadhim, K. N. Hussein
article en

Abstract

Nanostructured MgO:Fe was fabricated by spray Pyrolysis technique (SPT). XRD verifies MgO's cubic structure. The MgO thin film's crystallite size increased to 10.7–15.41 nm due to doping. SEM pictures display The surface becomes rougher and the grain size increases with concentration. The ideal MgO's average transmission value in the visible spectrum was 70%. The Tauc relation was used to calculate Eg, which decreased for MgO:Fe doping at 4%wt concentration from 362.1 to 3.52 eV. Resistance change as a measure of film sensitivity to gas indicates that MgO is a p-type semiconductor, with the maximum resistance being shown by MgO:Fe at 4%wt. The sensitivity of MgO films to NO2 diminishes as Fe content increases.

Digest Journal of Nanomaterials and BiostructuresVol. 19(3)
Mustansiriyah University
Openalex Percentile: Top 93%
Magnesium Oxide Properties and Applications
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