Wafer-bonded In0.53Ga0.47As/GaN p–n diodes with near-unity ideality factor
III–V/III-nitride p–n junctions were realized via crystal heterogeneous integration, and the resulting diodes were characterized to analyze electrical behavior and junction quality. p-type In0.53Ga0.47As, which is a well-established base layer in InP heterojunction bipolar transistor (HBT) technology, was used in combination with a homoepitaxial n-type GaN. The latter offers low dislocation density, coupled with high critical electric field and saturation velocity, which are attractive for use in future HBT collector layers. Transmission electron microscopy confirms an abrupt interface in the fabricated heterogeneous diodes. Electrical characterization of the diodes reveals a near-unity ideality factor (n ∼ 1.07) up to 145 °C, a high rectification ratio of ∼108, and a low interface trap density of 3.7 × 1012 cm−2.
Authors
- Bing-Ruey Wu (ORCID: https://orcid.org/0000-0002-5387-8349)
- Spyridon Pavlidis (ORCID: https://orcid.org/0000-0002-1690-2581)
- Seiji Mita (ORCID: https://orcid.org/0009-0002-8312-107X)
- Shane Stein (ORCID: https://orcid.org/0009-0001-1763-5403)
- B. D. Little (ORCID: https://orcid.org/0009-0007-8441-2166)
- Zlatko Sitar (ORCID: https://orcid.org/0000-0002-7385-0837)
- Keith Markham (ORCID: https://orcid.org/0009-0006-9859-6237)
- Fred Kish (ORCID: https://orcid.org/0000-0002-4299-2744)
- Rohan Sengupta (ORCID: https://orcid.org/0000-0002-7567-5390)
- J. Houston Dycus (ORCID: https://orcid.org/0009-0003-8248-3703)
Institutions
- North Carolina State University (US)
- Keysight Technologies (United States) (US)
- Eurofins (United States) (US)
- Adroit Materials (United States) (US)
Publication Details
- Journal
- Applied Physics Letters
- Published
- 2024-08-05
- DOI
- https://doi.org/10.1063/5.0194526
- Citations
- 5
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 1.55
Funders
- National Science Foundation