High-performance GaN ultraviolet polarization-sensitive photodetector based on ferroelectric polarization LiNbO3

High responsivity ultraviolet (UV) photodetectors (PDs) are essential for abundant civilian and military applications. Gallium nitride (GaN) has emerged as an ideal material for UV PD fabrication due to its favorable properties. However, the quality of GaN epitaxial layers significantly impacts device performance and reliability. Sapphire-based GaN epitaxial growth technology enables the realization of high-quality GaN epitaxial layers, making it the preferred choice for GaN substrates. Nonetheless, the thermal expansion coefficient mismatch between sapphire and GaN can lead to crystal mismatch and stress accumulation at high temperatures, affecting device performance and reliability. In contrast, lithium niobate (LiNbO3) exhibits similar coefficients of thermal expansion to GaN, mitigating crystal mismatch and stress accumulation issues. Here, we report the realization of a GaN UV PD by laminating GaN membrane onto ferroelectric LiNbO3 through selective electrochemical etching of the sapphire-based GaN epitaxial film. The LiNbO3-based GaN PD achieves a specific high on/off ratio of 107. At a 5 V bias voltage, the device exhibits a high peak responsivity of 1.712 × 103 A/W under 325 nm laser illumination. Furthermore, the device demonstrates excellent performance for polarization light detection, with a polarization ratio of approximately 54.95. Exploiting the local ferroelectric polarization of x-cut LiNbO3, the photogenerated electron–hole pairs in GaN are efficiently separated by the electrostatic field from the polarization of ferroelectric LiNbO3, resulting in enhanced light-to-electric conversion efficiency. Our work presents a method for fabricating high responsivity GaN-based UV PD, showcasing the potential of integrating ferroelectric LiNbO3 to enhance device performance.