Monolithic Control and Drive Blocks of AlGaN/GaN MIS-HEMTs for DC-DC Buck Converters

This study introduces a compact gallium nitride (GaN) dc-dc power converter that uses metal-insulator–semiconductor high-electron-mobility transistors (MIS-HEMTs) in a confined space measuring 1.2 mm2. By modulating the threshold voltages and optimizing the slew rate, the GaN converter incorporates control and drive blocks that function efficiently at a frequency of 500 kHz. The versatile pulsewidth modulation (PWM) signal generator is a crucial element that generates output waveforms with varying duty cycles (ranging from 30% to 70%) and stable 5.3-V amplitude and ensures proper operation of the gate driver and power HEMT while simplifying input signal requirements and providing precise control over the output voltage. The experimental results confirm the effectiveness of the proposed All-GaN integrated circuit (IC), showcasing its appropriateness for application in power electronics.