GaN Schottky diode with composed trench MIS barrier and junction barrier

Considering the effects of trench MIS barrier and p-type barrier on improving the characteristics of Schottky diodes, new GaN Schottky diodes structure with composed trench MIS barrier and junction barrier are proposed. The feature of proposed structure is the addition of a p-type barrier region on the TMBS structure. The p-type barrier region should be either on the side of trenches or in the middle of two trenches. Then the influence of key structure parameters of p-type barrier region, such as width, junction depth and doping concentration et al, on the static characteristics of proposed GaN diode are simulation studied. The structure of the p-type barrier region in the middle of two trenches has optimized characteristic, and the breakdown voltage could reach 1149 V and the Baliga's figure of merit can reach 1.263 GW/cm² . These results will provide valuable references for further study of GaN SBD.