Modeling and Simulation of MAPbI₃-Based Solar Cells with SnS₂ as the Electron Transport Layer (ETL) and MoS₂ as the Hole Transport Layer (HTL)

The integration of two-dimensional (2D) materials with perovskite solar cells is an exciting frontier of research. In this study, we utilize the 2D materials SnS2 and MoS2 as the electron transport layer (ETL) and hole transport layer (HTL), respectively, due to their exceptional photovoltaic properties. The primary aim of our work is to enhance the performance of the proposed solar cell configuration, ITO/SnS2/MAPbI3/MoS2/Au, by optimizing the thickness of each layer through numerical simulations. Additionally, we conducted a comprehensive evaluation of the effects of layer thickness, light intensity, and operating temperature on the photovoltaic performance of these solar cells. Our findings indicate that the theoretical efficiency of the solar cells can be increased from 15.76% to 16.95% by determining the optimal thicknesses for the layers: ITO (100 nm), SnS2 (10 nm), MAPbI3 (300 nm), MoS2 (20 nm), and Au (100 nm). The redesigned perovskite solar cells (PSCs), with the proposed structure and optimized layer thicknesses, exhibit superior performance compared with traditional solar cells that use the configuration ITO/SnO2/MAPbI3/Spiro-OMeTAD/Au. Consequently, this research suggests that the 2D materials SnS2 and MoS2 are promising alternatives to the conventional materials SnO2 and Spiro-OMeTAD, respectively. This study offers valuable insights that could facilitate the advancement of highly efficient solar cells incorporating 2D materials as the transport layers.