A reference source for use in the SOI RF process
Based on the 0.13um SOI RF process platform, the circuit uses neither pnp nor npn. However,for RF circuit, the basic IP of voltage reference source and current reference source with zero temperature coefficient is required. Because the environment’s temperature is changing, but as a benchmark, it needs to change nothing or very little with the temperature. In this paper, a voltage reference source and current reference source with zero temperature coefficient is designed by using the diode source of the process platform. We analysed the temperature characteristics of diode, cleverly extracted the positive and negative temperature characteristics of the characteristics, and synthesized the zero temperature characteristics. Its zero-temperature characteristics have been shown by calculation and simulation. Provide a design reference for the voltage reference source and the current reference source with zero temperature coefficient of the process platform or a similar process platform.
Authors
- jin rong
- Yang Wei (ORCID: https://orcid.org/0000-0003-2915-3898)
- qing bin
- hu yongshan
- zhao tianting
- yuan yidong
- wu shunmin
Institutions
- Beijing Microelectronics Technology Institute (CN)
Publication Details
- Published
- 2024-08-05
- DOI
- https://doi.org/10.1117/12.3038291
- Primary Topic
- Advancements in PLL and VCO Technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.00