Solution-derived Ge–Sb–Se–Te phase-change chalcogenide films

Ge-Sb-Se-Te chalcogenides, namely Se-substituted Ge-Sb-Te, have been developed as an alternative optical phase change material (PCM) with a high figure-of-merit. A need for the integration of such new PCMs onto a variety of photonic platforms has necessitated the development of fabrication processes compatible with diverse material compositions as well as substrates of varying material types, shapes, and sizes. This study explores the application of chemical solution deposition as a method capable of creating conformally coated layers and delves into the resulting modifications in the structural and optical properties of Ge-Sb-Se-Te PCMs. Specifically, we detail the solution-based deposition of Ge-Sb-Se-Te layers and present a comparative analysis with those deposited via thermal evaporation. We also discuss our ongoing endeavor to improve available choice of processing-material combinations and how to realize solution-derived high figure-of-merit optical PCM layers, which will enable a new era for the development of reconfigurable photonic devices.

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Publication Details

Journal
Scientific Reports
Published
2024-08-05
DOI
https://doi.org/10.1038/s41598-024-69045-8
Citations
4
Primary Topic
Phase-change materials and chalcogenides
Type
article
Field-Weighted Citation Impact
0.47

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article

Solution-derived Ge–Sb–Se–Te phase-change chalcogenide films

Brandon Matthew Triplett, Myungkoo Kang, Tian Gu, Mikhail Y. Shalaginov et al.
4 citations
Scientific Reports
Phase-change materials and chalcogenides
0.47
article

Solution-derived Ge–Sb–Se–Te phase-change chalcogenide films

Brandon Matthew Triplett, Myungkoo Kang, Tian Gu, Mikhail Y. Shalaginov, Clara Rivero‐Baleine, Cosmin‐Constantin Popescu, Quentin Altemose, Casey M. Schwarz, Anu Agarwal, Daniel Wiedeman, Yifei Zhang, Rashi Sharma, Patrick E. Lynch, Gil B. J. Sop Tagne, Juejun Hu, Cesar Blanco, Kathleen A. Richardson
article en
4 citations

Abstract

Ge-Sb-Se-Te chalcogenides, namely Se-substituted Ge-Sb-Te, have been developed as an alternative optical phase change material (PCM) with a high figure-of-merit. A need for the integration of such new PCMs onto a variety of photonic platforms has necessitated the development of fabrication processes compatible with diverse material compositions as well as substrates of varying material types, shapes, and sizes. This study explores the application of chemical solution deposition as a method capable of creating conformally coated layers and delves into the resulting modifications in the structural and optical properties of Ge-Sb-Se-Te PCMs. Specifically, we detail the solution-based deposition of Ge-Sb-Se-Te layers and present a comparative analysis with those deposited via thermal evaporation. We also discuss our ongoing endeavor to improve available choice of processing-material combinations and how to realize solution-derived high figure-of-merit optical PCM layers, which will enable a new era for the development of reconfigurable photonic devices.

Scientific ReportsVol. 14(1)
University of Central Florida (US), Lockheed Martin (United States) (US), Ursinus College (US), New York State College of Ceramics (US), Alfred University (US), Massachusetts Institute of Technology (US)
National Science Foundation, U.S. Department of Defense, University of Central Florida, Defense Advanced Research Projects Agency, Advanced Research Projects Agency
Openalex Percentile: Top 39%
Phase-change materials and chalcogenides
0.47
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