Ferroelectric AlBN films by molecular beam epitaxy

We report the properties of molecular beam epitaxy deposited AlBN thin films on a recently developed epitaxial nitride metal electrode, Nb2N. While a control AlN thin film exhibits standard capacitive behavior, distinct ferroelectric switching is observed in the AlBN films with increasing Boron mole fraction. The measured remnant polarization Pr∼15μC/cm2 and coercive field Ec∼ 1.45 MV/cm in these films are smaller than those recently reported on films deposited by sputtering, due to incomplete wake-up, limited by current leakage. Because AlBN preserves the ultrawide energy bandgap of AlN compared to other nitride hi-K dielectrics and ferroelectrics, and it can be epitaxially integrated with GaN and AlN semiconductors, its development will enable several opportunities for unique electronic, photonic, and memory devices.

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Publication Details

Journal
Applied Physics Letters
Published
2024-08-12
DOI
https://doi.org/10.1063/5.0181217
Citations
14
Primary Topic
Acoustic Wave Resonator Technologies
Type
article
Field-Weighted Citation Impact
2.58

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article

Ferroelectric AlBN films by molecular beam epitaxy

Takuya Maeda, Kazuki Nomoto, Debdeep Jena, Eungkyun Kim et al.
14 citations
Applied Physics Letters
Acoustic Wave Resonator Technologies
2.58
article

Ferroelectric AlBN films by molecular beam epitaxy

Takuya Maeda, Kazuki Nomoto, Debdeep Jena, Eungkyun Kim, Shubham Jadhav, Madhav Ramesh, Amit Lal, Thai‐Son Nguyen, Joongwon Lee, Farhan Rana, Chandrashekhar Savant, Huili Grace Xing, Ved Gund, Joseph Casamento, Yu‐Hsin Chen
article en
14 citations

Abstract

We report the properties of molecular beam epitaxy deposited AlBN thin films on a recently developed epitaxial nitride metal electrode, Nb2N. While a control AlN thin film exhibits standard capacitive behavior, distinct ferroelectric switching is observed in the AlBN films with increasing Boron mole fraction. The measured remnant polarization Pr∼15μC/cm2 and coercive field Ec∼ 1.45 MV/cm in these films are smaller than those recently reported on films deposited by sputtering, due to incomplete wake-up, limited by current leakage. Because AlBN preserves the ultrawide energy bandgap of AlN compared to other nitride hi-K dielectrics and ferroelectrics, and it can be epitaxially integrated with GaN and AlN semiconductors, its development will enable several opportunities for unique electronic, photonic, and memory devices.

Applied Physics LettersVol. 125(7)
Cornell University (US)
National Science Foundation, U.S. Department of Energy, Pennsylvania State University, Office of Science, Cornell Center for Materials Research, Materials Research Science and Engineering Center, Harvard University, Division of Materials Research, Basic Energy Sciences, Army Research Office, Energy Frontier Research Centers
Affordable and clean energy
Openalex Percentile: Top 10%
Acoustic Wave Resonator Technologies
2.58
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