Coupled Non-Destructive Methods, Kelvin Force Probe Microscopy and µ-Raman to Characterize Doping in 4H-SiC Power Devices
Investigation of the doped areas in 4H-SiC power devices has been done by non-destructive characterization methods. It consists of local surface potential measurements by Kelvin Probe Force Microscopy (KPFM) coupled with scanning electron microscopy (SEM) and µ-Raman spectroscopy. Near-field mappings of the devices’ surface have been realized, allowing us to discern the differently doped areas.
Authors
- Régis Déturche
- Enora Vuillermet (ORCID: https://orcid.org/0009-0001-3987-0690)
- Elise Usureau
- Jérémie Béal
- Anael Sedilot
- Mihai Lazar (ORCID: https://orcid.org/0000-0002-3641-1122)
- Nicolas Bercu (ORCID: https://orcid.org/0000-0002-3298-8784)
- Kuan Ting Wu
Institutions
- Université de Technologie de Troyes (FR)
- Laboratoire de Recherche en Nanosciences
- Université de Reims Champagne-Ardenne (FR)
Publication Details
- Journal
- Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena
- Published
- 2024-08-21
- DOI
- https://doi.org/10.4028/p-suilp5
- Primary Topic
- Silicon Carbide Semiconductor Technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- Ministère de l'Enseignement Supérieur et de la Recherche