Ultratough single crystal boron-doped diamond

The invention relates to a single crystal boron doped CVD diamond that has a toughness of at least about 22 MPa m.sup.1/2. The invention further relates to a method of manufacturing single crystal boron doped CVD diamond. The growth rate of the diamond can be from about 20-100 .mu.m/h.

Authors

Russell J. Hemley (ORCID: https://orcid.org/0000-0001-7398-8521)

Institutions

Carnegie Institution for Science (US)

Publication Details

Journal: OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information)
Published: 2025-01-16
Primary Topic: Diamond and Carbon-based Materials Research
Type: article

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article

Ultratough single crystal boron-doped diamond

Russell J. Hemley

Jan 16, 2025

OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information)

Diamond and Carbon-based Materials Research

article

Ultratough single crystal boron-doped diamond

Russell J. Hemley

January 16, 2025article en

Abstract

OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information)

Carnegie Institution for Science (US)

Diamond and Carbon-based Materials Research

Open Access PDF OpenAlex

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Ultratough single crystal boron-doped diamond — Russell J. Hemley · OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information) (2025) | TGRS Research Map | TGRS