Latest Research in Ferroelectric and Negative Capacitance Devices
12 research papers · 2026 median publication year
Top Research Topics in Ferroelectric and Negative Capacitance Devices
- Advanced Memory and Neural Computing — 7 papers
- Ferroelectric and Negative Capacitance Devices — 2 papers
- 2D Materials and Applications — 1 papers
- Optics — 1 papers
- Materials Science — 1 papers
Highest-Cited Papers
- 3D integration of 2D electronics for AI hardware
- Ferroelectric‐Driven Nonvolatile Phase Transition in MoTe 2 Transistors With an Expanded Memory Window
- Mo2TiC2Tx MXene Saturable Absorption for Neural Networks on a Chip
- HZO-based ferroelectric tunnel junction in crossbar structure enabling high current reading and large memory window
- Atomic-Scale hBN Memristors Engineered by Ion Implantation
- High-Performance Multilevel Memory Crossbar Array Based on Two-Dimensional Imine Polymer Film with Tunable Memory Behavior
- Interfacial Redox Engineering Driven Forming‐Free Intrinsic Bipolar Switching in SiO x Memristors
- Electrically Induced Phase Transition and Synaptic Functionality in MoTe 2 /Graphene Memristors
- Negative Differential Resistance Electronics: From Nonmonotonic Transport Physics to Functionally Compressed Computing
- Amorphous, Highly Conductive Pr 0.7 Ca 0.3 MnO 3 for Area‐Dependent Resistive Switching AlO x Bilayer Devices
- MoS 2 /Graphene Floating‐Gate Transistor Toward Non‐Volatile Memory and High‐Precision Synaptic Operations
- Analogue Phase Change Computational Memory with High Precision Reads and Energy Efficient Writes