Latest Research in Ferroelectric and Negative Capacitance Devices

Top Research Topics in Ferroelectric and Negative Capacitance Devices

• Advanced Memory and Neural Computing — 10 papers
• Ferroelectric and Negative Capacitance Devices — 2 papers
• Physical Unclonable Functions (PUFs) and Hardware Security — 1 papers
• Neural Networks and Reservoir Computing — 1 papers
• Chaotic Dynamics — 1 papers
• Optics — 1 papers
• Emerging Technologies — 1 papers

Highest-Cited Papers

1. Fast Electronic Memristors with Improved Retention and Synaptic Functionality Enabled by Tri-TaOx Engineering
2. Oxygen‐Scavenging‐Driven Interlayer Engineering for Balancing Linearity and Retention in IGZO Synaptic Memristors
3. Memristors Empowering Next‐Generation Human‐Computer Interaction
4. Granular Memristor-Driven Photonic True Random Number Generation
5. Descriptors to Dynamics: A Materials and Device Perspective on in‐Materio Physical Reservoir Computing for Neuromorphic Edge Intelligence
6. A Self-Rectifying Memristor for High Accuracy Neuromorphic Pattern Recognition
7. Deterministic Switching‐Path Engineering of CMOS‐Integrated 2D Memristors for Neuromorphic Computing
8. Nonlinear Selectorless Memory Technologies for High-Density Storage and Beyond-von-Neumann Computing: A Review
9. Current-Gated Nonlinear Dynamics of a Self-Heating Memristor: an Electrothermal Extension of the Pickett Filamentary Model
10. A Four‐Terminal TiO 2− x Memristor Architecture Enabling Multidimensional Associative Learning
11. Recent Advances in True Random Number Generators Based on Emerging Material-Based Semiconductor Devices: Toward Wearable and Flexible Electronics
12. Reservoir‐Driven Neuromorphic Computing Based on Composite Rare‐Earth/Transition Metal Oxide Memristor
13. Volatile Memristive Devices With Tunable Temporal Dynamics For Event‐Based Sensing
14. Toward all-optical unsupervised Hebbian learning in deep photonic neuromorphic networks
15. Metal‐Filamentary Memristor‐Based Artificial Neurons for Embodied Neuromorphic Intelligence
16. Study of Resistive Switching Dynamics and Memory States Equilibria in Analog Filamentary Conductive-Metal-Oxide/HfOx ReRAM via Compact Modeling
17. Emerging Two‐Dimensional vdW Materials and Their Heterostructures for Memristive Devices: Advances, Challenges, and Perspectives