Latest Research in GaN-based semiconductor devices and materials

82 research papers · 2026 median publication year

Top Research Topics in GaN-based semiconductor devices and materials

Highest-Cited Papers

  1. MOCVD Growth of (011) β-Ga2O3 Films: Defect Control and Device Implication
  2. High-Mobility Ge-Doped $β$-Ga$_2$O$_3$ Growth on Sapphire by Low-Pressure Chemical Vapor Deposition
  3. Atomic layer annealing enables low-temperature PEALD growth of highly c-axis-oriented GaN thin films on sapphire
  4. Enhanced thermal stability of SiGeSn by suppressing surface-mediated degradation
  5. Phi-Scaled Harmonic Cascade in Microtubule Lattices — E8 Intelligence Research
  6. Structural Changes and Transport Properties of YBa 2 Cu 3 O 7 Locally Modified by a He + Focused Ion Beam
  7. Vibrational spectroscopy identifies the bond asymmetry of hexagonal diamond
  8. Atomic-scale structure of static screening in noble-metal nanoparticles from clusters to the conductor limit
  9. Floquet-Plasmon Enhanced Charge Transfer at Catalytic Interfaces
  10. Low Temperature Halide Assisted HVPE Growth of Single Crystal AlN Films
  11. Si- and C-Induced Modifications in Vapor-Solid-Grown InGaAs Nanowires: From Crystal Structure to Carrier Dynamics
  12. IDART: Interferometric Dual‐AC Resonance Tracking for Nano‐Electromechanical Mapping
  13. Nonlinear electron-phonon interactions from first principles
  14. A discontinuous Galerkin approach for simulating graphene-based electron devices via the Boltzmann transport equation
  15. Study of Mo 2 C Conductive Thin Films for Potential Applications in Miniaturized Integrated Circuit Interconnects
  16. Linear and Nonlinear Optical Properties of an AlSb/InAs/AlSb Spherical Quantum Dot in a Magnetic Field
  17. Light-modulated low-frequency noise spectroscopy for deep-level defect characterization in Al-rich AlGaN heterostructures
  18. Electric field reconfiguration in W/ β -Ga2O3 Schottky barrier diodes under negative bias stress
  19. Preparation of non-alloyed metal contacts to n-type gallium nitride with ultralow specific contact resistivity of 5.8 × 10−9 Ω cm2
  20. Quantitative analysis of thermal conductivity reversal in binary alloys by an experimentally constrained first-principles calculation framework
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L3 Region - - 2026 Sep Q3

GaN-based semiconductor devices and materials

82 papers

Top Topics (10)

Materials Science13
GaN-based semiconductor devices and materials11
Ga2O3 and related materials4
Semiconductor Quantum Structures and Devices3
Thermal properties of materials3
Metallic Glasses and Amorphous Alloys3
Superconductivity3
Advanced Electron Microscopy Techniques and Applications3
Chemical Physics2
Advanced X-ray Imaging Techniques2

Top Publications (20)

1.MOCVD Growth of (011) β-Ga2O3 Films: Defect Control and Device Implication2.High-Mobility Ge-Doped $β$-Ga$_2$O$_3$ Growth on Sapphire by Low-Pressure Chemical Vapor Deposition3.Atomic layer annealing enables low-temperature PEALD growth of highly c-axis-oriented GaN thin films on sapphire4.Enhanced thermal stability of SiGeSn by suppressing surface-mediated degradation5.Phi-Scaled Harmonic Cascade in Microtubule Lattices — E8 Intelligence Research6.Structural Changes and Transport Properties of YBa 2 Cu 3 O 7 Locally Modified by a He + Focused Ion Beam7.Vibrational spectroscopy identifies the bond asymmetry of hexagonal diamond8.Atomic-scale structure of static screening in noble-metal nanoparticles from clusters to the conductor limit9.Floquet-Plasmon Enhanced Charge Transfer at Catalytic Interfaces10.Low Temperature Halide Assisted HVPE Growth of Single Crystal AlN Films11.Si- and C-Induced Modifications in Vapor-Solid-Grown InGaAs Nanowires: From Crystal Structure to Carrier Dynamics12.IDART: Interferometric Dual‐AC Resonance Tracking for Nano‐Electromechanical Mapping13.Nonlinear electron-phonon interactions from first principles14.A discontinuous Galerkin approach for simulating graphene-based electron devices via the Boltzmann transport equation15.Study of Mo 2 C Conductive Thin Films for Potential Applications in Miniaturized Integrated Circuit Interconnects16.Linear and Nonlinear Optical Properties of an AlSb/InAs/AlSb Spherical Quantum Dot in a Magnetic Field17.Light-modulated low-frequency noise spectroscopy for deep-level defect characterization in Al-rich AlGaN heterostructures18.Electric field reconfiguration in W/ β -Ga2O3 Schottky barrier diodes under negative bias stress19.Preparation of non-alloyed metal contacts to n-type gallium nitride with ultralow specific contact resistivity of 5.8 × 10−9 Ω cm220.Quantitative analysis of thermal conductivity reversal in binary alloys by an experimentally constrained first-principles calculation framework
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