Latest Research in GaN-based semiconductor devices and materials
82 research papers · 2026 median publication year
Top Research Topics in GaN-based semiconductor devices and materials
- Materials Science — 13 papers
- GaN-based semiconductor devices and materials — 11 papers
- Ga2O3 and related materials — 4 papers
- Semiconductor Quantum Structures and Devices — 3 papers
- Thermal properties of materials — 3 papers
- Metallic Glasses and Amorphous Alloys — 3 papers
- Superconductivity — 3 papers
- Advanced Electron Microscopy Techniques and Applications — 3 papers
- Chemical Physics — 2 papers
- Advanced X-ray Imaging Techniques — 2 papers
Highest-Cited Papers
- MOCVD Growth of (011) β-Ga2O3 Films: Defect Control and Device Implication
- High-Mobility Ge-Doped $β$-Ga$_2$O$_3$ Growth on Sapphire by Low-Pressure Chemical Vapor Deposition
- Atomic layer annealing enables low-temperature PEALD growth of highly c-axis-oriented GaN thin films on sapphire
- Enhanced thermal stability of SiGeSn by suppressing surface-mediated degradation
- Phi-Scaled Harmonic Cascade in Microtubule Lattices — E8 Intelligence Research
- Structural Changes and Transport Properties of YBa 2 Cu 3 O 7 Locally Modified by a He + Focused Ion Beam
- Vibrational spectroscopy identifies the bond asymmetry of hexagonal diamond
- Atomic-scale structure of static screening in noble-metal nanoparticles from clusters to the conductor limit
- Floquet-Plasmon Enhanced Charge Transfer at Catalytic Interfaces
- Low Temperature Halide Assisted HVPE Growth of Single Crystal AlN Films
- Si- and C-Induced Modifications in Vapor-Solid-Grown InGaAs Nanowires: From Crystal Structure to Carrier Dynamics
- IDART: Interferometric Dual‐AC Resonance Tracking for Nano‐Electromechanical Mapping
- Nonlinear electron-phonon interactions from first principles
- A discontinuous Galerkin approach for simulating graphene-based electron devices via the Boltzmann transport equation
- Study of Mo 2 C Conductive Thin Films for Potential Applications in Miniaturized Integrated Circuit Interconnects
- Linear and Nonlinear Optical Properties of an AlSb/InAs/AlSb Spherical Quantum Dot in a Magnetic Field
- Light-modulated low-frequency noise spectroscopy for deep-level defect characterization in Al-rich AlGaN heterostructures
- Electric field reconfiguration in W/ β -Ga2O3 Schottky barrier diodes under negative bias stress
- Preparation of non-alloyed metal contacts to n-type gallium nitride with ultralow specific contact resistivity of 5.8 × 10−9 Ω cm2
- Quantitative analysis of thermal conductivity reversal in binary alloys by an experimentally constrained first-principles calculation framework